| Część nr | Producent | Zastosowanie |
|---|
| SBL4030PT | Diodes | 30V; 40A schottky barrier rectifier |
| AZ23C9V1 | Diodes | 8.5-9.6V; 300mW surface mount zener diode. Ideally suited for automatic insertion |
| B0540W | Diodes | 40V; 0.5A surface mount schottky barrier rectifier. Guard ring construction for transient protection |
| BAS40T-06T | Diodes | 40V; 200mA surface mount schottky barrier diode. PN junction guard ring for transient and ESD protection |
| DDTA115KA | Diodes | 50V; 100mA PNP PRE-biased small signal surface mount transistor |
| 1N4758A | Diodes | 56V; 1W zener diode |
| S1B/BB | Diodes | 100V; 1.0A surface mount fast recovery rectifier |
| ZPY3.9 | Diodes | 3.7-4.1V silicon planar zener diode |
| SBL2060PT | Diodes | 60V; 20A schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection applications |
| D6G | Diodes | 800V; 1.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop |
| SMAJ6.0(C)A | Diodes | 6.0V; 400mW surface mount transient voltage suppressor |
| HDC18CA | Diodes | 18V; 373W low capacitance transient voltage suppressor |
| AZ23C10 | Diodes | 9.4-10.6V; 300mW surface mount zener diode. Ideally suited for automatic insertion |
| PR6001 | Diodes | 50V; 6.0A fast recovery rectifier; fasr switching for high efficiency |
| MMSZ5237BS | Diodes | 8.2V; 200mW surface mount zener diode. General purpose. Ideally suited for automated assembly processes |
| US1A | Diodes | 50V; 1.0A surface mount ultra-fast rectifier |
| B1100/B | Diodes | 100V; 1.0A high voltage schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection application |
| PR6003 | Diodes | 200V; 6.0A fast recovery rectifier; fasr switching for high efficiency |
| MMBZ5250B | Diodes | 20V; 350mW surface mount zener diode. General purpose; Ideally suited for automated assembly processes |
| SF20GG | Diodes | 400V; 2.0A super fast glass passivated rectifier; diffused junction |
| 1N5233B | Diodes | 6.0V; 500mW epitaxial zener diode |
| SMAJ33(C)A | Diodes | 33V; 400mW surface mount transient voltage suppressor |
| PBU407 | Diodes | 1000V; 4.0A bridge rectifier |
| 2W10G | Diodes | 1000V; 2.0A glass passivated bridge rectifier |
| ZPD6.8 | Diodes | 6.4-7.2V silicon planar zener diode |
| P4KE82 | Diodes | 66.40V; 400W transient voltage suppressor |
| PR15005S | Diodes | 600V; 1.5A fast recovery rectifier; fast switching for high efficiency |
| DT453N | Diodes | 30V; N-channel enchancement mode field effect transistor |
| B280 | Diodes | 80V; 2.0A high voltage schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection application |
| MBR2060CT | Diodes | 60V; 20A schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection application |
