| Część nr | Producent | Zastosowanie |
|---|
| S1D/DB | Diodes | 200V; 1.0A surface mount fast recovery rectifier |
| HDC30CA | Diodes | 30V; 373W low capacitance transient voltage suppressor |
| MBR4050PT | Diodes | 50V; 40A schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection application |
| 1N5248B | Diodes | 18V; 500mW epitaxial zener diode |
| BC817-40 | Diodes | 45V; surface mount schottky barrier switching diode. Guard ring construction for transient protection |
| DDTC144EE | Diodes | 50V; 100mA NPN PRE-biased small signal surface mount transistor |
| DL4003 | Diodes | 200V; 1.0A surface mount fast recovery rectifier |
| DDTC123YKA | Diodes | 50V; 100mA NPN PRE-biased small signal surface mount transistor |
| UDZ47B | Diodes | 45.825-48.175V; 200mW surface mount precision zener diode. Ideally suited for automated assembly processes |
| DDTC143ECA | Diodes | 50V; 100mA NPN PRE-biased small signal surface mount transistor |
| PR2004 | Diodes | 400V; 2.0A fast recovery rectifier; fast switching for high efficiency |
| P4KE30CA | Diodes | 25.60V; 400W transient voltage suppressor |
| MBR1560CT | Diodes | 60V; 15A schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection application |
| BC807-16 | Diodes | 45V; PNP surface mount transistor. For switching and AF amplifier applications |
| MMBZ5226B | Diodes | 3.3V; 350mW surface mount zener diode. General purpose; Ideally suited for automated assembly processes |
| 2A04 | Diodes | 400V; 2.0A rectifier; diffused junction; high current capability and low forward voltage drop |
| 1N4454 | Diodes | 75V; silicon switching diode. For general purpose switching applications |
| MMBZ5232B | Diodes | 5.6V; 350mW surface mount zener diode. General purpose; Ideally suited for automated assembly processes |
| DDTA123YUA | Diodes | 50V; 100mA PNP PRE-biased small signal surface mount transistor |
| BAL99-7 | Diodes | 100V; dual surface mount switching diode. For general purpose switching applications |
| ZMM11 | Diodes | 11V; 500mW surface mount zener diode. Ideally suited for automated insertion |
| BZ55C3V0 | Diodes | 3.0V; 500mW zener diode |
| TB0640M | Diodes | 58V; 50A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction |
| TZX18 | Diodes | 16.9-19.0V; 500mW; 5.0mA epitaxial planar zener diode. General purpose, medium current |
| 2N7002DW | Diodes | 60V; dual N-channel enchancement mode field effect transistor |
| SBL835 | Diodes | 35V; 8.0A schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection applications |
| MBR3030PT | Diodes | 30V; 30A schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection application |
| 1N5401G | Diodes | 100V; 3.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop |
| MBR10100CT | Diodes | 100V; 10A high voltage schottky barrier rectifier for use in low voltage, high frequency inverters, free wheeling and polarity protection applications |
| 1N5222B | Diodes | 2.5V; 500mW epitaxial zener diode |
