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| Część nr | Zastosowanie |
|---|---|
| EN29F002NB-45JI | 2 Megabit (256K x 8-bit) flach memory. Speed 45ns. 5.0V +-10% for both read/write operation. Without RESET function. |
| EN29F002NT-70JI | 2 Megabit (256K x 8-bit) flach memory. Speed 70ns. 5.0V +-10% for both read/write operation. Without RESET function. |
| EN27C01070J | 1Megabit EPROM (128K x 8). Speed 70ns. Single 5V pover supply. |
| EN29F002NB-90T | 2 Megabit (256K x 8-bit) flach memory. Speed 90ns. 5.0V +-10% for both read/write operation. Without RESET function. |
| EN29F002T-90T | 2 Megabit (256K x 8-bit) flach memory. Speed 90ns. 5.0V +-10% for both read/write operation. With RESET function. |
| EN27LV51290TI | 512Kbit EPROM (64K x 8). Speed 90ns. Single +3.3V power supply - regulated power supply 3.0V - 3.6V |
| EN27LV020B200T | 2Megabit low voltage EPROM (256K x 8). Speed 200ns. Single +3.3V power supply - unreregulated power supply 2.7V - 3.6V |
| EN27LV010120T | 1Megabit low voltage EPROM (128K x 8). Speed 120ns. 3.0V to 3.6V Vcc tolerance. |
| EN29F080-70TI | 8 Megabit (1024K x 8-bit) flach memory. Speed 70ns. Vcc = 5.0V+-10%. |
| EN27LV01090PI | 1Megabit low voltage EPROM (128K x 8). Speed 90ns. 3.0V to 3.6V Vcc tolerance. |
| EN27LV512120P | 512Kbit EPROM (64K x 8). Speed 120ns. Single +3.3V power supply - regulated power supply 3.0V - 3.6V |
| EN29F002NB-70T | 2 Megabit (256K x 8-bit) flach memory. Speed 70ns. 5.0V +-10% for both read/write operation. Without RESET function. |
| EN27C02070T | 2Megabit EPROM (256K x 8). Speed 70ns. Single 5V power supply. |
| EN29F002T-45PI | 2 Megabit (256K x 8-bit) flach memory. Speed 45ns. 5.0V +-10% for both read/write operation. With RESET function. |
| EN27LV02090J | 2Megabit low voltage EPROM (256K x 8). Speed 90ns. Single +3.3V power supply - regulated power supply 3.0V - 3.6V |
| EN27C02045PI | 2Megabit EPROM (256K x 8). Speed 45ns. Single 5V power supply. |
| EN29LV800JT-70TI | 8 Megabit (1024K x 8-bit/512K x 16-bit) flach memory. Boot sector flash memory, CMOS 3.0 volt only. Speed 70ns. Top sector. |
| EN29F002NT-55P | 2 Megabit (256K x 8-bit) flach memory. Speed 55ns. 5.0V +-10% for both read/write operation. Without RESET function. |
| EN27LV010B90PI | 1Megabit low voltage EPROM (128K x 8). Speed 90ns. 2.7V to 3.6V Vcc tolerance. |
| EN29F002B-45J | 2 Megabit (256K x 8-bit) flach memory. Speed 45ns. 5.0V +-10% for both read/write operation. With RESET function. |
| EN27LV02090TI | 2Megabit low voltage EPROM (256K x 8). Speed 90ns. Single +3.3V power supply - regulated power supply 3.0V - 3.6V |
| EN29F002T70TI | 2 Megabit (256K x 8-bit) flach memory. Speed 70ns. 5.0V +-10% for both read/write operation. With RESET function. |
| EN27C51255TI | 512Kbit EPROM (64K x 8). Speed 55ns. Single 5V power supply. |
| EN27LV512B90TI | 512Kbit EPROM (64K x 8). Speed 90ns. Single +3.3V power supply - unregulated power supply 2.7V - 3.6V |
| EN27LV010B90TI | 1Megabit low voltage EPROM (128K x 8). Speed 90ns. 2.7V to 3.6V Vcc tolerance. |
| EN27LV020B90T | 2Megabit low voltage EPROM (256K x 8). Speed 90ns. Single +3.3V power supply - unreregulated power supply 2.7V - 3.6V |
| EN27LV512B90PI | 512Kbit EPROM (64K x 8). Speed 90ns. Single +3.3V power supply - unregulated power supply 2.7V - 3.6V |
| EN29F002NT-70T | 2 Megabit (256K x 8-bit) flach memory. Speed 70ns. 5.0V +-10% for both read/write operation. Without RESET function. |
Eon Profil
Eon Silicon Solution Inc Product Overview . Electrically erasable, read/write non-volatile flash memory. . Boot Block Top/Bottom Programming Architecture. . Sector Protection by using standard PROM programming equipment. . Embedded Programming and Erase algorithm. . High Endurance, capable of 100,000 Write/Erase cycles. . Data Polling and Toggle Bits features. . Erase Suspend and Resume functions. . High speed. . Commercial and Industrial Temperature Ranges.