| Część nr | Producent | Zastosowanie |
|---|
| G8340-31 | Hamamatsu | Supply voltage0.3-3.8V; InGaAs PIN photodiode with preamp pigtail type, 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH |
| G8195-21 | Hamamatsu | Spectral response range0.9-1.7um; reverse voltage20V; InGaAs PIN photodiode receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
| R8520U-00-C12 | Hamamatsu | Spectral responce300-650nm; between anode and cathode1000Vdc; 0.1mA; position sensitive photomultiplier tube |
| G7881 | Hamamatsu | Supply voltage0.3-5.5V; InGaAs PIN photodiode with preamp receptacle type, 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH |
| C8061-01 | Hamamatsu | Supply voltage 0.5-7V; InGaAs multichannel detector head. Desined for InGaAs linear image sensor |
| L2195 | Hamamatsu | 7.5A; 20V; high precision lamp housing E7536 for 150W xenon lamps and mercury-xenon lamps |
| G1746 | Hamamatsu | Active area size2.3x2.3mm; reverse voltage5V; GaAsP photodiode. Schottky type with red sensitivity extended type. For analytical instruments, color identification and UC detection |
| G9204-512R | Hamamatsu | Number of pixels512; supply voltage5.0V; clock pulse voltage 5.5V; InGaAs linear image sensor for DWDM wavelength monitor and optical spectrum analyzer |
| L2481-02 | Hamamatsu | 75W; super-quiet mercury-xenon lamp deep UV light source for precision measurement |
| L8958-11 | Hamamatsu | Connector typeSC; 1.1V; 1.5mW; laser diode high output power 1.5mW, pigtail type. For optical fiber communications |
| J5022-21 | Hamamatsu | Size 87A; capillary plate. For liquid/gas filter, differential pressure pumping, orifice for mass spectroscopy, light/W-ray collimator |
| R331 | Hamamatsu | Spectral responce 160 to 650nm; 2500Vdc; average anode current0.2mA; photomultiplier tube |
| R7511 | Hamamatsu | Spectral responce115-195nm; between anode and cathode1250Vdc; 0.01mA; photomultiplier tube |
| M4190 | Hamamatsu | High speed streak unit ; temporal revolution better than 10ps |
| H8568-04 | Hamamatsu | Input voltage 11.5-15.5V; max input current7-25mA; compact side-on PMT photosensor module |
| C5403-30 | Hamamatsu | Number of pixels 768x494; ; 1/3-inch CCD video camera |
| H6779-01 | Hamamatsu | Input voltage 11.5-15.5V; photosensor module in metal package PMT |
| H7710-12 | Hamamatsu | Input voltage 11.5-15.5V; max input current7-25mA; compact side-on PMT photosensor module |
| C6086-32 | Hamamatsu | Video system CCIR; effective x-ray tube voltage range 10-100kVp; X-ray I.I. CCD camera |
| L8784 | Hamamatsu | PCI BUS compatible counting board for windows 98/98SE/2000/ME |
| H7422-40 | Hamamatsu | Input voltage 11.5-15.5V; max input current62mA; photosensor module in metal package PMT with cooler |
| H5783-02 | Hamamatsu | Input voltage 11.5-15.5V; photosensor module in metal package PMT |
| L2656 | Hamamatsu | 80mA; 5V; 1.0A; high power GaAIAs infrared LED. For optical switches and automatic control systems |
| G7881-32 | Hamamatsu | Supply voltage0.3-5.5V; InGaAs PIN photodiode with preamp receptacle type, 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH |
| R3550A | Hamamatsu | Spectral responce 300 to 650nm; 1250Vdc; average anode current0.1mA; photomultiplier tube |
| R632-01 | Hamamatsu | Spectral responce400-1200nm; between anode and cathode1500Vdc; 0.01mA; photomultiplier tube |
| G7881-23 | Hamamatsu | Supply voltage0.3-5.5V; InGaAs PIN photodiode with preamp receptacle type, 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH |
| L8446-06 | Hamamatsu | 0.6-2.2W; 2V; CW laser diode high optical power from a single chip |
| C4880-20-26A | Hamamatsu | 12-bit idigital CCD camera. For X-ray scintillator readout, readout of various fluorescences, X-ray diffraction readout, neutron radiography |
| P1195 | Hamamatsu | 200Vdc; 100mW; CdS photoconductive cell resin coating type. Standard type designed to withstand high voltage and high power |
