Path:okDatasheet > Dane Semiconductor > IR Datasheet > IR-151
0MSC IR51HD320 IRFL4310 307URA160P2 SD200R20PSC SD253N12S15MBV 307UA80P4 SD203R20S15MBC SD103N16S15MV SD153R04S15MV SD103N14S10PC IRG4RC10S SD200R20MC IRFU9310 IRF9Z34NL SD600N16PSC IRFR3303 300HF80M SD153R04S10MBV ST230S16P0 SD103R16S15PV 309UR250P4 ST183S08MFN1L PVT322S 181RKI1
Część nr | Producent | Zastosowanie |
---|---|---|
301U200P4 | IR | Standard recovery diode |
SD103R12S10MSC | IR | Fast recovery diode |
IR51HD320 | IR | Self-oscillating half-bridge |
IRFL4310 | IR | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 1.6A |
307URA160P2 | IR | Standard recovery diode |
SD200R20PSC | IR | Standard recovery diode |
SD253N12S15MBV | IR | Fast recovery diode |
307UA80P4 | IR | Standard recovery diode |
SD203R20S15MBC | IR | Fast recovery diode |
SD103N16S15MV | IR | Fast recovery diode |
SD153R04S15MV | IR | Fast recovery diode |
SD103N14S10PC | IR | Fast recovery diode |
IRG4RC10S | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A |
SD200R20MC | IR | Standard recovery diode |
IRFU9310 | IR | HEXFET power MOSFET. VDSS = -400V, RDS(on) = 7.0 Ohm, ID = -1.8A |
IRF9Z34NL | IR | HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.10 Ohm, ID = -19A |
SD600N16PSC | IR | Standard recovery diode |
IRFR3303 | IR | HEXFET power MOSFET. VDSS = 30V, RDS(on) = 0.031 Ohm, ID = 33A |
300HF80M | IR | Standard recovery diode |
SD153R04S10MBV | IR | Fast recovery diode |
ST230S16P0 | IR | Phase control thyristor |
SD103R16S15PV | IR | Fast recovery diode |
309UR250P4 | IR | Standard recovery diode |
ST183S08MFN1L | IR | Inverter grade thyristor |
PVT322S | IR | HEXFET power MOSFET photovoltaic relay |
181RKI100S90 | IR | Phase control thyristor |
IRF9520NL | IR | HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.48 Ohm, ID = -6.8A |
SD200N12PC | IR | Standard recovery diode |
ST330S12M1 | IR | Phase control thyristor |
IRFU13N20D | IR | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.235 Ohm, ID = 13A |