Path:okDatasheet > Dane Semiconductor > IXYS Datasheet > IXYS-54
8A IXFT60N20F EVDD409 IXFR55N50 MWI200-06A8 DSSK70-008A VHF55-12IO7 MCC21-12IO8B MDI400-12E4 MCC162-12IO1 VBO52-18NO7 VUB160-16NO1 IXSH24N60AU1 CS35-14IO2 VBO40-16NO6 IXFH12N90Q IXDN55N120 VUB50-16PO1 IXGH12N100U1 IXGT32N60C IXGN32N60BU1 IXTH12N90 VCD105-16IO7 IXGH40N30B IXGT28N6
Część nr | Producent | Zastosowanie |
---|---|---|
IXFX24N90Q | IXYS | 900V HiPerFET power MOSFET Q-class |
FSS100-008A | IXYS | 80V dual power schottky diode |
IXFT60N20F | IXYS | 200V HiPerRF power MOSFET |
EVDD409 | IXYS | Gate driver IC evaluation board |
IXFR55N50 | IXYS | 500V HiPerFET power MOSFET |
MWI200-06A8 | IXYS | 600V IGBT module |
DSSK70-008A | IXYS | 80V power schottky rectifier with common cathode |
VHF55-12IO7 | IXYS | 1200V single phase rectifier bridge |
MCC21-12IO8B | IXYS | 1200V thyristor module |
MDI400-12E4 | IXYS | 1200V IGBT module |
MCC162-12IO1 | IXYS | 1200V thyristor modules thyristor/diode module |
VBO52-18NO7 | IXYS | 1800V single phase rectifier bridge |
VUB160-16NO1 | IXYS | 1600V three phase rectifier bridge |
IXSH24N60AU1 | IXYS | 600V HiPerFAST IGBT with diode |
CS35-14IO2 | IXYS | 1400V phase control thyristor |
VBO40-16NO6 | IXYS | 1600V single phase rectifier bridge |
IXFH12N90Q | IXYS | 900V HiPerFET power MOSFET Q-class |
IXDN55N120 | IXYS | 1200V high voltage IGBT with optional diode |
VUB50-16PO1 | IXYS | 1600V three phase rectifier bridge |
IXGH12N100U1 | IXYS | 1000V high voltage IGBT |
IXGT32N60C | IXYS | 600V HiPerFAST IGBT |
IXGN32N60BU1 | IXYS | 600V HiPerFAST IGBT with diode |
IXTH12N90 | IXYS | 900V MegaMOS FET |
VCD105-16IO7 | IXYS | 1600V thyristor/diode module |
IXGH40N30B | IXYS | 300V HiPerFAST IGBT |
IXGT28N60BD1 | IXYS | 600V low voltage IGBT with diode |
IXGT35N120C | IXYS | 1200V IGBT |
IXFE73N30Q | IXYS | 300V HiPerFET power MOSFET Q-class |
IXGA12N60C | IXYS | 600V HiPerFAST IGBT |
VBO25-16AO2 | IXYS | 1600V single phase rectifier bridge |