| Część nr | Producent | Zastosowanie |
|---|
| SMAJ150 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 150 V. |
| SMBJ5953A | JGD | 1.5W silicon surface mount zener diode. Zener voltage 150 V. Test current 2.5 mA. +-10% tolerance. |
| RL204 | JGD | Silicon rectifier. Max recurrent peak reverse voltage 400 V. Max average forward rectified current 2.0 A. |
| SMBJ5926 | JGD | 1.5W silicon surface mount zener diode. Zener voltage 11 V. Test current 34.1 mA. +-20% tolerance. |
| SMBJ6.0A | JGD | Surface mount transient voltage suppressor. Breakdown voltage 6.67 V (min), 7.37 V (max). Test current 10.0 mA. |
| SMAJ30 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 30 V. |
| SMBJ5938C | JGD | 1.5W silicon surface mount zener diode. Zener voltage 36 V. Test current 10.4 mA. +-2% tolerance. |
| 1N980 | JGD | 0.5W, silicon zener diode. Zener voltage 62V. Test current 2.0mA. +-20% tolerance. |
| SMBJ5926C | JGD | 1.5W silicon surface mount zener diode. Zener voltage 11 V. Test current 34.1 mA. +-2% tolerance. |
| HER205 | JGD | 2.0 A, high efficiency rectifier. Max recurrent peak reverse voltage 400V. |
| SF13 | JGD | Super fast rectifier. Max recurrent peak reverse voltage 150 V. Max average forward current 1.0 A. |
| HA11 | JGD | 1.0A, high efficiency rectifier. Max recurrent peak reverse voltage 50V. |
| MMBD1201 | JGD | Surface mount switching diode. Max forward voltage 1.00V at 200mA. |
| SMBJ7.0CA | JGD | Surface mount transient voltage suppressor. Breakdown voltage 7.78 V (min), 8.60 V (max). Test current 10.0 mA. Bidirectional. |
| HER153 | JGD | 1.5 A, high efficiency rectifier. Max recurrent peak reverse voltage 200V. |
| P6KE27A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 27 V. |
| SMBJ5933B | JGD | 1.5W silicon surface mount zener diode. Zener voltage 22 V. Test current 17.0 mA. +-5% tolerance. |
| BZX84C20 | JGD | 350mW zener diode, 20V |
| P6KE91C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 91 V. Bidirectional. |
| W02M | JGD | Single phase silicon bridge rectifier. Max recurrent peak reverse voltage 200 V. Max average forward rectified current 1.5 A. |
| SMBJ51C | JGD | Surface mount transient voltage suppressor. Breakdown voltage 56.7 V (min), 69.3 V (max). Test current 1.0 mA. Bidirectional. |
| BZX84C3 | JGD | 350mW zener diode, 3V |
| 1N4739 | JGD | 1W zener diode. Nominal zener voltage 9.1V. 10% tolerance. |
| 1N959 | JGD | 0.5W, silicon zener diode. Zener voltage 8.2V. Test current 15.0mA. +-20% tolerance. |
| 3EZ180D | JGD | 3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, +-20% tolerance. |
| 3EZ9.1D4 | JGD | 3 W, silicon zener diode. Nominal voltage 9.1 V, current 82 mA, +-4% tolerance. |
| 3EZ68D1 | JGD | 3 W, silicon zener diode. Nominal voltage 68 V, current 11 mA, +-1% tolerance. |
| 3EZ22D | JGD | 3 W, silicon zener diode. Nominal voltage 22 V, current 34 mA, +-20% tolerance. |
| 1N4110 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 16V. |
| SMBJ5914 | JGD | 1.5W silicon surface mount zener diode. Zener voltage 3.6 V. Test current 104.2 mA. +-20% tolerance. |
