| Część nr | Producent | Zastosowanie |
|---|
| UF5406 | JGD | Ultra fast rectifier. Max recurrent peak reverse voltage 600 V. Max average forward rectified current 3.0 A. |
| HER608G | JGD | 6.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 1000V. |
| 1N5933C | JGD | 1.5 W, silicon zener diode. Zener voltage 22V. Test current 17 mA. +-2% tolerance. |
| 1N5524 | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 5.6 V. Test current 3.0 mAdc. +-20% tolerance. |
| ZMM55-C18 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 16.8-19.1 V. Test current 5 mA. +-5% tolerance. |
| SMAJ28CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 28 V. Bidirectional. |
| SMAJ70C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 70 V. Bidirectional. |
| 1N957 | JGD | 0.5W, silicon zener diode. Zener voltage 6.8V. Test current 18.5mA. +-20% tolerance. |
| 1N4737A | JGD | 1W zener diode. Zener voltage 7.5V. |
| 1N5944C | JGD | 1.5 W, silicon zener diode. Zener voltage 62 V. Test current 6.0 mA. +-2% tolerance. |
| SMBJ5914D | JGD | 1.5W silicon surface mount zener diode. Zener voltage 3.6 V. Test current 104.2 mA. +-1% tolerance. |
| KBPC602 | JGD | Single phase 6.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 200V. |
| MMBZ5230B | JGD | Surface mount zener diode. Nominal zener voltage 4.7V, test current 20.0mA. |
| 2W10G | JGD | Single phase 2.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 1000 V. |
| 1N746C | JGD | 500mW, silicon zener diode. Zener voltage 3.3 V. Test current 20 mA. +-2% tolerance. |
| SMAJ9.0C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 9.0 V. Bidirectional. |
| P6KE150C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 150 V. Bidirectional. |
| SMAJ8.0A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 8.0 V. |
| 3EZ7.5D10 | JGD | 3 W, silicon zener diode. Nominal voltage 7.5 V, current 100 mA, +-10% tolerance. |
| SS16 | JGD | Surface mount schottky barrier rectifier. Max recurrent peak reverse voltage 60 V. Max average forward rectified current 1.0 A. |
| SFR151 | JGD | Soft fast recovery rectifier. Max recurrent peak reverse voltage 50 V. Max average forward current 1.5 A. |
| 1N5935B | JGD | 1.5 W, silicon zener diode. Zener voltage 27V. Test current 13.9 mA. +-5% tolerance. |
| P6KE39A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 39 V. |
| ZMM55-B9V1 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 8.5-9.6 V. Test current 5 mA. +-2% tolerance. |
| ZMM55-D18 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 16.8-19.1 V. Test current 5 mA. +-20% tolerance. |
| SMBJ8.5C | JGD | Surface mount transient voltage suppressor. Breakdown voltage 9.44 V (min), 11.5 V (max). Test current 1.0 mA. Bidirectional. |
| 1N4760D | JGD | 1W zener diode. Nominal zener voltage 68V. 1% tolerance. |
| 1N4131D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 75V. 1% tolerance. |
| P4KE33 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 33 V. |
| SMAJ90 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 90 V. |
