Path:okDatasheet > Dane Semiconductor > MDE Semiconductor Datasheet > MDE Semiconductor-45
P6KE170A SA17 SMCJ9.0A 20KW216A SMBJ22 SA120A MDE-25D911K 30KW48 P6KE10A SA7.0 SMBJ9.0A P4KE250 SMBJ85A 15KW33A MAX20-58.0C SA6.0 20KW48A MDE-7D470M MDE-10D781K MDE-20D911K MDE-40D122K MAX20-70.0CA SMDJ20A P4KE36A 5KP64A MDE-5D151K MDE-10D470K
Część nr | Producent | Zastosowanie |
---|---|---|
SMCJ58A | MDE Semiconductor | 58.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
LCE24A | MDE Semiconductor | 24.00V; 1mA ;1500W peak pulse power; low capacitance transient voltage suppressor. Ideal for data line applications |
5KP12 | MDE Semiconductor | 12.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
P6KE170A | MDE Semiconductor | 145.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
SA17 | MDE Semiconductor | 17.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
SMCJ9.0A | MDE Semiconductor | 9.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
20KW216A | MDE Semiconductor | 216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
SMBJ22 | MDE Semiconductor | 22.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
SA120A | MDE Semiconductor | 120.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE-25D911K | MDE Semiconductor | 910V; max peak current18000A; metal oxide varistor. Standard D series 25mm disc |
30KW48 | MDE Semiconductor | 48.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
P6KE10A | MDE Semiconductor | 8.55V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
SA7.0 | MDE Semiconductor | 7.00V; 10mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
SMBJ9.0A | MDE Semiconductor | 9.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
P4KE250 | MDE Semiconductor | 202.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
SMBJ85A | MDE Semiconductor | 85.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
15KW33A | MDE Semiconductor | 33.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MAX20-58.0C | MDE Semiconductor | 58.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
SA6.0 | MDE Semiconductor | 6.00V; 10mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
20KW48A | MDE Semiconductor | 48.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE-7D470M | MDE Semiconductor | 47V; max peak current500A; metal oxide varistor. Standard D series 7mm disc |
MDE-10D781K | MDE Semiconductor | 780V; max peak current3500A; metal oxide varistor. Standard D series 10mm disc |
MDE-20D911K | MDE Semiconductor | 910V; max peak current75000A; metal oxide varistor. Standard D series 20mm disc |
MDE-40D122K | MDE Semiconductor | 1200V; max peak current40000A; metal oxide varistor. High energy series 40mm single disc |
MAX20-70.0CA | MDE Semiconductor | 70.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
SMDJ20A | MDE Semiconductor | 20.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
P4KE36A | MDE Semiconductor | 30.80V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
5KP64A | MDE Semiconductor | 64.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE-5D151K | MDE Semiconductor | 150V; max peak current800A; metal oxide varistor. Standard D series 5mm disc |
MDE-10D470K | MDE Semiconductor | 47V; max peak current1000A; metal oxide varistor. Standard D series 10mm disc |