Path:okDatasheet > Dane Semiconductor > PanJit Datasheet > PanJit-43

ED506S MMSZ5250B P4SMAJ210C P6SMBJ30A 1N5406 P4KE11CA P6SMBJ24C P6SMBJ48C 3KP9.0A P4SMAJ18 1N5367B P4KE7.5 TSP120B SA14C P6KE6.8A PG301R TSP120B BZT52-C11S BZT52-C9V1S 2EZ110 1N5379B GBP200 1.5SMCJ78CA 3KP51A P4SMAJ90 SA17CA 15KP180CA

PanJit Prospekty Katalog-43

Część nrProducentZastosowanie
BAT54AW PanJitSurface mount schottky barrier diode. Max recurrent peak reverse voltage 30 V. Max average forward current 0.2 A.
PG156R PanJitGlass passivated junction fast switching rectifier. Max recurrent peak reverse voltage 600 A. Average forward current. IO at 55degC, 3.8inches lead length 60 Hz, resistive or inductive load 1.5 A.
SA48C PanJitGlass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 48.00V, Vbr(min/max) = 53.30/67.50V, It = 1 mA.
ED506S PanJitDPAK surfase mount super fast recovery rectifier. Max recurrent peak reverse voltage 600V. Max average forward rectified current (Tc=75degC) 5.0A.
MMSZ5250B PanJitSurface mount silicon zener diode. Nominal zener voltage Vz = 20 V @ Izt. 500 mWatts zener diode.
P4SMAJ210C PanJitSurfase mount transient voltage suppressor. 400W. Reverse stand-off voltage 210 V. Breakdown voltage(min/max) 231/296.1 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 376 V. Peak pulse current 1.1 A.
P6SMBJ30A PanJitSurfase mount transient voltage suppressor. 600W. Vrwm = 30 V. Vbr(min/max) = 33.3/38.3 V. It = 1.0 mA. Ir = 5 uA. Vc = 48.4 V. Ipp = 12.4 A.
1N5406 PanJitHigh current plastic silicon rectifier. Max reccurent peak reverse voltage 600V. Max average forward rectified current 3.0A.
P4KE11CA PanJitGlass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 9.40V, Vbr(min/max) = 10.50/11.60V, It = 1 mA.
P6SMBJ24C PanJitSurfase mount transient voltage suppressor. 600W. Vrwm = 24 V. Vbr(min/max) = 26.7/33.8 V. It = 1.0 mA. Ir = 5 uA. Vc = 43.0 V. Ipp = 14.0 A.
P6SMBJ48C PanJitSurfase mount transient voltage suppressor. 600W. Vrwm = 48 V. Vbr(min/max) = 53.3/67.5 V. It = 1.0 mA. Ir = 5 uA. Vc = 85.5 V. Ipp = 7.0 A.
3KP9.0A PanJitGlass passivated junction transient voltage suppressor. 3000 W peak pulse power. Vrwm = 9.00 V. Vbr = 10.00 V (min), 11.50 V (max). It = 1 mA.
P4SMAJ18 PanJitSurfase mount transient voltage suppressor. Reverse stand-off voltage 18 V. Breakdown voltage(min/max) 20.0/25.3 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 32.2 V. Peak pulse current 12.4 A.
1N5367B PanJitGlass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 43V, Izt = 30mA
P4KE7.5 PanJitGlass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 6.05V, Vbr(min/max) = 6.75/8.25V, It = 10mA.
TSP120B PanJitAxial lead bi-directional thyristor surge protector device. Rated repetitive peakoff-state voltage 120V. Breakover voltage 160V. On-state voltage 5V. Repetitive peakoff-state current 5uA Breakover current 800mA.
SA14C PanJitGlass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 14.00V, Vbr(min/max) = 15.60/19.80V, It = 1 mA.
P6KE6.8A PanJitGlass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 5.80V, Vbr(min/max) = 6.45/7.14V, It = 10 mA.
PG301R PanJitGlass passivated junction fast switching rectifier. Max recurrent peak reverse voltage 100 A. Max average forward rectified current 9.5mm lead lehgth at Ta = 55degC 3.0 A.
TSP120B PanJitAxial lead bi-directional thyristor surge protector device. Rated repetitive peakoff-state voltage 120V. Breakover voltage 160V. On-state voltage 5V. Repetitive peakoff-state current 5uA Breakover current 800mA.
BZT52-C11S PanJitSurface mount silicon zener diode. Power 200 mWatts. Nominal zener voltage 11 V
BZT52-C9V1S PanJitSurface mount silicon zener diode. Power 200 mWatts. Nominal zener voltage 9.1 V
2EZ110 PanJitGlass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 110.0 V. Test current Izt = 4.5 mA.
1N5379B PanJitGlass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 110V, Izt =12mA
GBP200 PanJitIn-line glass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 50V. Max average rectified output current 2.0A.
1.5SMCJ78CA PanJitSurface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 78V; Vbr(min/max) = 86.7/99.7V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 126V, @ Ipp = 11.4A
3KP51A PanJitGlass passivated junction transient voltage suppressor. 3000 W peak pulse power. Vrwm = 51.00 V. Vbr = 56.70 V (min), 65.20 V (max). It = 1 mA.
P4SMAJ90 PanJitSurfase mount transient voltage suppressor. 400W. Reverse stand-off voltage 90 V. Breakdown voltage(min/max) 100/126.5 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 160 V. Peak pulse current 2.5 A.
SA17CA PanJitGlass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 17.00V, Vbr(min/max) = 18.90/21.70V, It = 1 mA.
15KP180CA PanJitGlass passivated junction transient voltage suppressor. Vrwm = 180 V. Vbr(min/max) = 198/230.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 292 V @ Ipp = 51 A.

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