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| Część nr | Zastosowanie |
|---|---|
| 1N5817 | Schottky barrier rectifier. Max recurrent peak reverse voltage 20V. Max RMS voltage 14V. Max DC blocking voltage 20V. Current 1.0A |
| 2SC2921 | NPN planar silicon transistor. Audio power amplifier, DC to DC converter |
| 1N5397 | Silicon rectifier. Max recurrent peak reverse voltage 600V. Max RMS voltage 420V. MAX DC blocking voltage 600V. Current 1.5A |
| BU407 | Silicon epitaxial planar transistor. High frequency, high power transistor for audio and general purpose. |
| 2SD235 | NPN epitaxial silicon transistor. Low frequency power amplifier. |
| FR103 | Fast recovery rectifier. Current 1.0A. Maximum recurrent peak reverse voltage 200V. Maximum RMS voltage 140V. Maximum DC blocking voltage 200V. |
| MJ15002 | PNP planar silicon transistor. Audio power amplifier DC to DC converter |
| 2SB435 | PNP epitaxial silicon transistor. Low frequency power amplifier. |
| KBPC1506 | Single-phase silicon bridge rectifier. Current 15A. Maximum recurrent peak reverse voltage 600V. Maximum RMS voltage 420V. Maximum DC blocking voltage 600V |
| LM2931CT-5.0 | Low dropout regulator. Vout = 5V. |
| 2SD1432 | NPN tripple diffused planar silicin transistor. Color TV horizontal output applications(no damper diode) |
| MJ15004 | PNP planar silicon transistor. Audio power amplifier DC to DC converter |
| NE555M | Precision timer |
| 2SD1876 | NPN triple diffused planar silicon transistor. Color TV horizontal output applications(damper diode built in) |
| 1N5395 | Silicon rectifier. Max recurrent peak reverse voltage 400V. Max RMS voltage 280V. Max DC blocking voltage 400V. Current 1.5A |
| 1N5402 | Silicon rectifier. Max recurrent peak reverse voltage 200V. Max RMS voltage 140V. Max DC blocking voltage 200V. Current 3.0A |
| WS62256LLP | Very low power/volpage CMOS SRAM. 32K x 8 bit. Vcc 4.4V-5.5V. Speed 70ns |
| 2SC1050 | Silicon epitaxial planar transistor. NPN high frequency, high power, primarily for use in audio and general purpose |
| 2SC1827 | NPN epitaxial silicon transistor. Low frequency power amplifier. |
| MJ11017 | PNP silicon darlington transistor. Switching regulators. PWM inverters. Solenoid and relay drivers |
| S8050LT1 | Transistor(PNP). Power dissipation 0.3W, Collector current 0.5A. Collector-base voltage 40V |
| KBPC3506 | Single-phase silicon bridge rectifier. Current 35A. Maximum recurrent peak reverse voltage 600V. Maximum RMS bridge input voltage 420V. Maximum DC blocking voltage 600V |
| SMA5817 | Surface mount schottky barrier rectifier. Max reccurent peak reverse voltage 20V. Max RMS bridge input voltage 14V. Max DC blocking voltage 20V. |
| LM385Z-2.5 | Micropower voltage reference diode. Low voltage reference 2.5V |
| MJ10009 | NPN silicon transistor. Switching regulators. PWM inverters. Solenoid and relay drivers. |
| 2SD401 | Silicon epitaxial planar transistor. |
| WS2418 | Telephone tone ringer with bridge diode |
| TIP41C | NPN silicon power transistor. Medium power linear and switching applications Collector-base voltage 100V. Collector-emitter voltage 100V. Emitter-base voltage 5V |
WingShing Profil
Wing Shing Electronic designs and manufactures a broad range of standard and application-specific components: Discrete Components Diodes Thyristors Transistors Integrated Circuits Analog and Mixed-Signal Circuit Peripheral Interface Storage