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W4NRD8C-U000 spec: Diameter 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

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W4NRD8C-U000 Datasheet i Spec

Producent : Cree 

Opakowanie :  

Pins : 0 

Temperatura : Min 0 °C | Max 0 °C

Rozmiar : 306 KB

Zastosowanie : Diameter 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition 

W4NRD8C-U000 PDF Pobierz