Path:OKDatasheet > Dane Semiconductor > Diodes Datasheet > 1N4006G
1N4006G spec: 800V; 1.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop
Path:OKDatasheet > Dane Semiconductor > Diodes Datasheet > 1N4006G
1N4006G spec: 800V; 1.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop
Producent : Diodes
Opakowanie :
Pins : 2
Temperatura : Min -65 °C | Max 150 °C
Rozmiar : 65 KB
Zastosowanie : 800V; 1.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop