Podobne BSS138DW

  • BSS123W
    • 100V; 170mA N-channel enchancement mode field effect transistor
  • BSS138-7
    • 50V; 200mA N-channel enchancement mode field effect transistor
  • BSS138DW
    • 50V; 200mA dual N-channel enchancement mode field effect transistor
  • BSS138W
    • 50V; 200mA N-channel enchancement mode field effect transistor

BSS138DW Datasheet i Spec

Producent : Diodes 

Opakowanie : SOT-363 

Pins : 6 

Temperatura : Min -55 °C | Max 150 °C

Rozmiar : 63 KB

Zastosowanie : 50V; 200mA dual N-channel enchancement mode field effect transistor 

BSS138DW PDF Pobierz