CTA2N1P-7 spec: 60V; 150mW complex transistor array. Guard ring construction for transient protection

Podobne CTA2N1P-7

CTA2N1P-7
- 60V; 150mW complex transistor array. Guard ring construction for transient protection
CTA2P1N-7
- 40V; 150mW complex transistor array

CTA2N1P-7 Datasheet i Spec

Producent : Diodes

Opakowanie : SOT-363

Pins : 6

Temperatura : Min -55 °C | Max 150 °C

Rozmiar : 67 KB

Zastosowanie : 60V; 150mW complex transistor array. Guard ring construction for transient protection