Path:OKDatasheet > Dane Semiconductor > Diodes Datasheet > TB1100H
TB1100H spec: 90V; 100A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction
Podobne TB1100H
- TB1100H
- 90V; 100A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction
- TB1100L
- 90V; 30A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction
- TB1100M
- 90V; 50A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction
TB1100H Datasheet i Spec
Producent : Diodes
Opakowanie : SMB
Pins : 2
Temperatura : Min -40 °C | Max 150 °C
Rozmiar : 202 KB
Zastosowanie : 90V; 100A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction
TB1100H PDF Pobierz