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Część nrZastosowanie
EC-10P20 P-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range.
ECM-300H 300W RMS class D audio amplifier module.
EC-10P20 P-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range.
EC-10N20 N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range.
EC-10N16 N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.
EC-10P16 P-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.
ECF10P25 P-channel lateral MOSFET. High power 125 W. Drain-source voltage 250V. Storage temperature range.
EC-10N16 N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.
EC-20P16 P-channel lateral MOSFET. High power 250 W. Drain-source voltage 160V. Storage temperature range.
EC-20P20 P-channel lateral MOSFET. High power 250 W. Drain-source voltage 200V. Storage temperature range.
ECM-600H 600W RMS class D audio amplifier module.
EC-20N20 N-channel lateral MOSFET. High power 250 W. Drain-source voltage 200V. Storage temperature range.
EC-20P20 P-channel lateral MOSFET. High power 250 W. Drain-source voltage 200V. Storage temperature range.
EC-10N16 N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.
EC-10P20 P-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range.
EC-10N20 N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range.
EC-10N20 N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range.
EC-10N16 N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.
ECF10N25 N-channel lateral MOSFET. High power 125 W. Drain-source voltage 250V. Storage temperature range.
EC-20N20 N-channel lateral MOSFET. High power 250 W. Drain-source voltage 200V. Storage temperature range.
EC-20N16 N-channel lateral MOSFET. High power 250 W. Drain-source voltage 160V. Storage temperature range.
EC-10P16 P-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.
EC-20N16 N-channel lateral MOSFET. High power 250 W. Drain-source voltage 160V. Storage temperature range.

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