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Path:OKDatasheet > Dane Semiconductor > Hamamatsu Datasheet
Słowo kluczowe: Hamamatsu Datasheet, Data Sheet Hamamatsu, Hamamatsu Datasheets, Hamamatsu Corporation
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Hamamatsu oficjalnej stronie internetowej
Część nr | Zastosowanie |
---|---|
C4900 | Input current 14mA; output range 0-1250V; high voltage power supply unit |
P930 | Supply voltage150Vdc; 50mW; CdS photoconductive cell hermetically sealed for high reliability |
C7247 | InputV +-18V; DA-type socket assemblies |
L8347-22 | Connector typeFC ;2V; 0.1mW; laser diode pigtail type, 1.3um, 1.25, 2.5Gpbs. For optical fiber communications, fiber channel, gigabit ethernet, HDTV, SDH |
H5783-04 | Input voltage 11.5-15.5V; photosensor module in metal package PMT |
L7558 | Forward current100mA; 5V; high-speed, high power infrared LED for spatial light transmission. |
R821 | Spectral responce160-320nm; between anode and cathode1250Vdc; 0.01mA; photomultiplier tube |
P8079-01 | 0.5V; InAs photovoltaic detector high-speed, low noise photovoltaic IR detector |
F2813-22 | Rectangular MCP and assembly series. For detection and imaging of electron, ions, VUV lights, X-rays and V-rays mass spectroscopy, energy spectroscopy and high-speed response CRTs |
R1705 | Spectral responce 300 to 650nm; 1800Vdc; anode current 0.02mA; photomultiplier tube |
L6112-01 | 70mA; 5V; 0.6A; high input red LED. For optical switches, etc |
C8060-01 | Supply voltage 0.5-7V; InGaAs multichannel detector head. Desined for InGaAs linear image sensor |
H7260K-01 | Spectral responce300-880nm; between anode and cathode800Vdc; linear array multianode PMT and assembly |
C7339 | OutpuV -5 to +5V; position sensor (for laser beam alignment) |
C6086-24 | Spatial resolution62um; effective x-ray tube voltage range 10-100kVp; X-ray CCD camera |
H7732P-01 | Input voltage 11.5-15.5V; max input current40mA; compact side-on PMT photosensor module |
L3882 | 80mA; 5V; 0.8A; high input red LED. For optical switches, etc |
R1387 | Stectral responce 300 to 850nm; 1250Vdc; anode current 0.2mA; hotomultiplier tube |
P467 | Supply voltage100Vdc; 100mW; CdS photoconductive cell hermetically sealed for high reliability |
R6353 | Spectral responce185-680nm; new compact type PMT |
G3297 | Active area size1.3x1.3mm; reverse voltage5V; GaAsP photodiode - diffusion type (red sensitivity extended type). For analytical instruments, color identification |
C9052-01 | Supply voltage +16V; Si photodiode evalution circuit easy to use for Si photodiode operation |
H8567-04 | Input voltage 11.5-15.5V; max input current7-25mA; compact side-on PMT photosensor module |
R3234-01 | Spectral responce 300 to 650nm; 2500Vdc; anode current 0.1mA; high-speed photon counting photomultiplier tube |
G8797-22 | Supply voltage0.5-6V; InGaAs PIN photodiode with preamp pigtail type, 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH |
F2813-12 | Rectangular MCP and assembly series. For detection and imaging of electron, ions, VUV lights, X-rays and V-rays mass spectroscopy, energy spectroscopy and high-speed response CRTs |
P4639 | Active area size4x5mm; rated input voltage+-15 +-0.5V; infrared detector mudule with preamp thermoelectrically cooled type easy-to-use detector module with built-in preamplifier. For infrared detection and CO2 laser detection |
P8079-11 | 0.5V; InAs photovoltaic detector high-speed, low noise photovoltaic IR detector |
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