P6606-310 spec: Active area 1x1mm; 0.2mW; InSb photoconductive detector thermoelectrically cooled detector capable of long-term measurements

Podobne P6606-310

P6606-110
- Active area 1x1mm; 0.2mW; InSb photoconductive detector thermoelectrically cooled detector capable of long-term measurements
P6606-210
- Active area 1x1mm; 0.2mW; InSb photoconductive detector thermoelectrically cooled detector capable of long-term measurements
P6606-310
- Active area 1x1mm; 0.2mW; InSb photoconductive detector thermoelectrically cooled detector capable of long-term measurements
P6606-320
- Active area 2x2mm; 0.2mW; InSb photoconductive detector thermoelectrically cooled detector capable of long-term measurements

P6606-310 Datasheet i Spec

Producent : Hamamatsu

Opakowanie : TO-8

Pins : 6

Temperatura : Min -40 °C | Max 60 °C

Rozmiar : 170 KB

Zastosowanie : Active area 1x1mm; 0.2mW; InSb photoconductive detector thermoelectrically cooled detector capable of long-term measurements