Path:OKDatasheet > Dane Semiconductor > Hitachi Datasheet > BB502M
BB502M spec: Small signal high frequency amplifier field effect (FET) transistor
Podobne BB502M
- BB501C
- Small signal high frequency amplifier field effect (FET) transistor
- BB501M
- Small signal high frequency amplifier field effect (FET) transistor
- BB502C
- Small signal high frequency amplifier field effect (FET) transistor
- BB502C
- Small signal high frequency amplifier field effect (FET) transistor
- BB502M
- Small signal high frequency amplifier field effect (FET) transistor
- BB503C
- Small signal high frequency amplifier field effect (FET) transistor
- BB503M
- Small signal high frequency amplifier field effect (FET) transistor
BB502M Datasheet i Spec
Producent : Hitachi
Opakowanie : MPAK-4
Pins : 0
Temperatura : Min 0 °C | Max 0 °C
Rozmiar : 71 KB
Zastosowanie : Small signal high frequency amplifier field effect (FET) transistor
BB502M PDF Pobierz