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2 IRG4BC20FD-S ST780C06L0L IRFPF50 303UR120P2 SD253R08S20MSV IRF723 IRG4PC40U 305URA200 IRFP254N ST780C06L1 SD200N24MBC ST110S12P0VL ST180C04C2 305UA250P3 SD150R20MSC ST203S12MFJ0L ST173C10CHK2 ST300C18L0L ST110S12P1V SD103N16S15PSV SD300N32PBC ST203C10CHH2L SD150N20PC 301UR120P2

IR Prospekty Katalog-127

Część nrProducentZastosowanie
SD453R25S20MTC IRFast recovery diode
IRF722 IRN-channel HEXFET, 400V, 2.8A
IRG4BC20FD-S IRInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A
ST780C06L0L IRPhase control thyristor
IRFPF50 IRHEXFET power MOSFET. VDSS = 900 V, RDS(on) = 1.6 Ohm, ID = 6.7 A
303UR120P2 IRStandard recovery diode
SD253R08S20MSV IRFast recovery diode
IRF723 IRN-channel HEXFET, 350V, 2.8A
IRG4PC40U IRInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.72V @ VGE = 15V, IC = 20A
305URA200 IRStandard recovery diode
IRFP254N IRHEXFET power MOSFET. VDSS = 250 V, RDS(on) = 125 mOhm, ID = 23 A
ST780C06L1 IRPhase control thyristor
SD200N24MBC IRStandard recovery diode
ST110S12P0VL IRPhase control thyristor
ST180C04C2 IRPhase control thyristor
305UA250P3 IRStandard recovery diode
SD150R20MSC IRStandard recovery diode
ST203S12MFJ0L IRInverter grade thyristor
ST173C10CHK2 IRInverter grade thyristor
ST300C18L0L IRPhase control thyristor
ST110S12P1V IRPhase control thyristor
SD103N16S15PSV IRFast recovery diode
SD300N32PBC IRStandard recovery diode
ST203C10CHH2L IRInverter grade thyristor
SD150N20PC IRStandard recovery diode
301UR120P2 IRStandard recovery diode
130HF80PBV IRStandard recovery diode
IRFIZ34N IRHEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.04 Ohm, ID = 21A
IRF6601 IRPower MOSFET, 20V, 26A
SD203R04S10PSC IRFast recovery diode

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