| Część nr | Producent | Zastosowanie |
|---|
| 45LFR30 | IR | Standard recovery diode |
| IRFY9130CM | IR | HEXFET power mosfet |
| 72UFR80A | IR | Standard recovery diode |
| IRF1405S | IR | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 5.3 mOhm, ID = 131A. |
| IRF5N5210 | IR | HEXFET power MOSFET surface mount. BVDSS = -100V, RDS(on) = 0.060 Ohm, ID = -31A |
| ST180C16C2 | IR | Phase control thyristor |
| SD1053C18S30L | IR | Fast recovery diode |
| IRGPC20F | IR | Insulated gate bipolar transistor |
| SD203R25S10MBC | IR | Fast recovery diode |
| SD203N08S20MBC | IR | Fast recovery diode |
| 307UA200 | IR | Standard recovery diode |
| SD150OC25L | IR | Standard recovery diode |
| ST083S08PFK0 | IR | Inverter grade thyristor |
| SD253N04S20MBV | IR | Fast recovery diode |
| IRFIB7N50A | IR | HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 6.6 A |
| 200HFR40MSV | IR | Standard recovery diode |
| SD203N16S15MSV | IR | Fast recovery diode |
| IRG4BC15UD-L | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.02V @ VGE = 15V, IC = 7.8A |
| SD300R08MSC | IR | Standard recovery diode |
| ST330C04C0 | IR | Phase control thyristor |
| ST183C04CHK2 | IR | Inverter grade thyristor |
| IRF5850 | IR | HEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.135 Ohm |
| SD500N40MSC | IR | Standard recovery diode |
| IRHN2C50SE | IR | HEXFET transistor |
| ST2600C20R0 | IR | Phase control thyristor |
| SD103N04S10PSC | IR | Fast recovery diode |
| 307UR160P5 | IR | Standard recovery diode |
| 300UR160AYPD | IR | Standard recovery diode |
| ST330S16P1 | IR | Phase control thyristor |
| IRFZ44VZL | IR | N-channel power MOSFET for fast switching applications, 60V, 57A |
