Path:okDatasheet > Dane Semiconductor > IR Datasheet > IR-72
203R10S20MC ST330S12M3 301U120 110RKI80 301URA80P2 ST180S08M2 PVG612S-T ST110S04P0 307UA120 309UR80P5 SD103R04S20MBC 300UR160YPD 72UR120AYPD IRH9250 301UR160P3 SD600N32PTC ST2600C30R0L IRL3102S SD103N08S10MC SD150N16MV IRHN7250 ST230C12C1 ST230C16C0 182RKI80 ST333C08LHK2L IRG4PH4
Część nr | Producent | Zastosowanie |
---|---|---|
IRF450 | IR | Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 500V, RDS(on) = 0.400 Ohm, ID = 12A |
301UA200P4 | IR | Standard recovery diode |
SD203R10S20MC | IR | Fast recovery diode |
ST330S12M3 | IR | Phase control thyristor |
301U120 | IR | Standard recovery diode |
110RKI80 | IR | Phase control thyristor |
301URA80P2 | IR | Standard recovery diode |
ST180S08M2 | IR | Phase control thyristor |
PVG612S-T | IR | HEXFET power mosfet photovoltaic relay |
ST110S04P0 | IR | Phase control thyristor |
307UA120 | IR | Standard recovery diode |
309UR80P5 | IR | Standard recovery diode |
SD103R04S20MBC | IR | Fast recovery diode |
300UR160YPD | IR | Standard recovery diode |
72UR120AYPD | IR | Standard recovery diode |
IRH9250 | IR | HEXFET transistor |
301UR160P3 | IR | Standard recovery diode |
SD600N32PTC | IR | Standard recovery diode |
ST2600C30R0L | IR | Phase control thyristor |
IRL3102S | IR | Power MOSFET for DC-DC converters, 20V, 61A |
SD103N08S10MC | IR | Fast recovery diode |
SD150N16MV | IR | Standard recovert diode |
IRHN7250 | IR | HEXFET transistor |
ST230C12C1 | IR | Phase control thyristor |
ST230C16C0 | IR | Phase control thyristor |
182RKI80 | IR | Phase control thyristor |
ST333C08LHK2L | IR | Inverter grade thyristor |
IRG4PH40KD | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.74V @ VGE = 15V, IC = 15A |
ST183S04PFN0L | IR | Inverter grade thyristor |
IRFPG40 | IR | HEXFET power MOSFET. VDSS = 1000 V, RDS(on) = 3.5 Ohm, ID = 4.3 A |