Path:OKDatasheet > Dane Semiconductor > IR Datasheet > IRC540
IRC540 spec: HEXFET power MOSFET. Continuous drain current 28A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 100V. Drain-to-source on-resistance 0.077Ohm
Path:OKDatasheet > Dane Semiconductor > IR Datasheet > IRC540
IRC540 spec: HEXFET power MOSFET. Continuous drain current 28A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 100V. Drain-to-source on-resistance 0.077Ohm
Producent : IR
Opakowanie : TO-220
Pins : 5
Temperatura : Min -55 °C | Max 175 °C
Rozmiar : 244 KB
Zastosowanie : HEXFET power MOSFET. Continuous drain current 28A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 100V. Drain-to-source on-resistance 0.077Ohm