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IRC830 spec: HEXFET power MOSFET. Continuous drain current 4.5A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 500V. Drain-to-source on-resistance 1.5 Ohm
Podobne IRC830
- IRC830
- HEXFET power MOSFET. Continuous drain current 4.5A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 500V. Drain-to-source on-resistance 1.5 Ohm
IRC830 Datasheet i Spec
Producent : IR
Opakowanie : TO-220
Pins : 5
Temperatura : Min -55 °C | Max 150 °C
Rozmiar : 244 KB
Zastosowanie : HEXFET power MOSFET. Continuous drain current 4.5A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 500V. Drain-to-source on-resistance 1.5 Ohm
IRC830 PDF Pobierz