Path:OKDatasheet > Dane Semiconductor > IR Datasheet > IRF7526D1
IRF7526D1 spec: FETKY MOSFET and schottky diode. VDSS = -30V, RDS(on) = 0.20 Ohm, schottky Vf = 039V.
Podobne IRF7526D1
- IRF7103
- N-channel power MOSFET for fast switching applications, 50V, 3A
- IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
- IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
- IRF7103QTR
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
- IRF720
- N-channel HEXFET, 400V, 3.3A
- IRF7204
- P-channel MOSFET for fast switching applications, 20V, 5.3A
- IRF721
- N-channel HEXFET, 350V, 3.3A
- IRF722
- N-channel HEXFET, 400V, 2.8A
IRF7526D1 Datasheet i Spec
Producent : IR
Opakowanie : Micro8
Pins : 8
Temperatura : Min -55 °C | Max 150 °C
Rozmiar : 131 KB
Zastosowanie : FETKY MOSFET and schottky diode. VDSS = -30V, RDS(on) = 0.20 Ohm, schottky Vf = 039V.
IRF7526D1 PDF Pobierz