Path:OKDatasheet > Dane Semiconductor > IR Datasheet > IRF7707
IRF7707 spec: HEXFET power MOSFET. VDSS = -20V, RDS(on) = 22mOhm, ID = -7.0A @ VGS = -4.5V. RDS(on) = 33mOhm, ID = -6.0A @ VGS = -2.5V.
Podobne IRF7707
- IRF7103
- N-channel power MOSFET for fast switching applications, 50V, 3A
- IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
- IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
- IRF7103QTR
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
- IRF720
- N-channel HEXFET, 400V, 3.3A
- IRF7204
- P-channel MOSFET for fast switching applications, 20V, 5.3A
- IRF721
- N-channel HEXFET, 350V, 3.3A
- IRF722
- N-channel HEXFET, 400V, 2.8A
IRF7707 Datasheet i Spec
Producent : IR
Opakowanie : TSSOP
Pins : 8
Temperatura : Min -55 °C | Max 150 °C
Rozmiar : 169 KB
Zastosowanie : HEXFET power MOSFET. VDSS = -20V, RDS(on) = 22mOhm, ID = -7.0A @ VGS = -4.5V. RDS(on) = 33mOhm, ID = -6.0A @ VGS = -2.5V.
IRF7707 PDF Pobierz