IRF7755 spec: HEXFET power MOSFET. VDSS = -20V. RDS(on) = 51mOhm, ID = -3.7A @ VGS = -4.5V. RDS(on) = 86mOhm, ID = -2.8A @ VGS = -2.5V.

Podobne IRF7755

IRF7103
- N-channel power MOSFET for fast switching applications, 50V, 3A
IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
IRF7103QTR
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
IRF720
- N-channel HEXFET, 400V, 3.3A
IRF7204
- P-channel MOSFET for fast switching applications, 20V, 5.3A
IRF721
- N-channel HEXFET, 350V, 3.3A
IRF722
- N-channel HEXFET, 400V, 2.8A

IRF7755 Datasheet i Spec

Producent : IR

Opakowanie : TSSOP

Pins : 8

Temperatura : Min -55 °C | Max 150 °C

Rozmiar : 273 KB

Zastosowanie : HEXFET power MOSFET. VDSS = -20V. RDS(on) = 51mOhm, ID = -3.7A @ VGS = -4.5V. RDS(on) = 86mOhm, ID = -2.8A @ VGS = -2.5V.