Path:OKDatasheet > Dane Semiconductor > IR Datasheet > IRF830S
IRF830S spec: HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.5 Ohm , ID = 4.5A
Podobne IRF830S
- IRF820
- HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A
- IRF820AL
- HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A
- IRF820AS
- HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A
- IRF820S
- HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A
- IRF830A
- HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0A
- IRF830AS
- HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0A
- IRF830S
- HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.5 Ohm , ID = 4.5A
- IRF840
- HEXFET power MOSFET. VDS = 500V, RDS(on) = 0.85 Ohm , ID = 8.0A
IRF830S Datasheet i Spec
Producent : IR
Opakowanie : SMD-220
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Rozmiar : 192 KB
Zastosowanie : HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.5 Ohm , ID = 4.5A
IRF830S PDF Pobierz