Path:OKDatasheet > Dane Semiconductor > IR Datasheet > IRFB260N
IRFB260N spec: HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.040 Ohm, ID = 56A
Path:OKDatasheet > Dane Semiconductor > IR Datasheet > IRFB260N
IRFB260N spec: HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.040 Ohm, ID = 56A
Producent : IR
Opakowanie :
Pins : 3
Temperatura : Min -55 °C | Max 175 °C
Rozmiar : 98 KB
Zastosowanie : HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.040 Ohm, ID = 56A