Path:OKDatasheet > Dane Semiconductor > IR Datasheet > IRFI640G
IRFI640G spec: HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.18 Ohm, ID = 9.8 A
Path:OKDatasheet > Dane Semiconductor > IR Datasheet > IRFI640G
IRFI640G spec: HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.18 Ohm, ID = 9.8 A
Producent : IR
Opakowanie : TO-220 FULLPAK
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Rozmiar : 189 KB
Zastosowanie : HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.18 Ohm, ID = 9.8 A