Path:OKDatasheet > Dane Semiconductor > IR Datasheet > IRFIBC30G
IRFIBC30G spec: HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 2.5 A
Path:OKDatasheet > Dane Semiconductor > IR Datasheet > IRFIBC30G
IRFIBC30G spec: HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 2.5 A
Producent : IR
Opakowanie : TO-220 FULLPAK
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Rozmiar : 185 KB
Zastosowanie : HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 2.5 A