Path:OKDatasheet > Dane Semiconductor > IR Datasheet > IRFIBF30G
IRFIBF30G spec: HEXFET power MOSFET. VDSS = 900V, RDS(on) = 3.7 Ohm, ID = 1.9A
Path:OKDatasheet > Dane Semiconductor > IR Datasheet > IRFIBF30G
IRFIBF30G spec: HEXFET power MOSFET. VDSS = 900V, RDS(on) = 3.7 Ohm, ID = 1.9A
Producent : IR
Opakowanie : TO-220 FULLPAK
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Rozmiar : 183 KB
Zastosowanie : HEXFET power MOSFET. VDSS = 900V, RDS(on) = 3.7 Ohm, ID = 1.9A