Path:OKDatasheet > Dane Semiconductor > IR Datasheet > IRFU9120N
IRFU9120N spec: HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.48 Ohm, ID = -6.6A
Podobne IRFU9120N
- IRFU024N
- Power MOSFET, 55V, 17A
- IRFU120N
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.21 Ohm, ID = 9.4A
- IRFU120N
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.21 Ohm, ID = 9.4A
- IRFU13N15D
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.18 Ohm, ID = 14A
- IRFU13N20D
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.235 Ohm, ID = 13A
- IRFU13N20D
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.235 Ohm, ID = 13A
- IRFU210
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 1.5 Ohm, ID = 2.6A
- IRFU214
- HEXFET power MOSFET. VDSS = 250V, RDS(on) = 2.0 Ohm, ID = 2.2A
IRFU9120N Datasheet i Spec
Producent : IR
Opakowanie : I-PAK
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Rozmiar : 128 KB
Zastosowanie : HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.48 Ohm, ID = -6.6A
IRFU9120N PDF Pobierz