Path:OKDatasheet > Dane Semiconductor > IR Datasheet > IRG4BC10SD
IRG4BC10SD spec: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
Path:OKDatasheet > Dane Semiconductor > IR Datasheet > IRG4BC10SD
IRG4BC10SD spec: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
Producent : IR
Opakowanie :
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Rozmiar : 230 KB
Zastosowanie : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A