Path:OKDatasheet > Dane Semiconductor > IR Datasheet > PVT412S
PVT412S spec: HEXFET power MOSFET photovoltaic relay
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PVT412S Datasheet i Spec
Producent : IR
Opakowanie : DIP
Pins : 6
Temperatura : Min -40 °C | Max 85 °C
Rozmiar : 328 KB
Zastosowanie : HEXFET power MOSFET photovoltaic relay
PVT412S PDF Pobierz