Path:OKDatasheet > Dane Semiconductor > IXYS Datasheet > IXBH42N170
IXBH42N170 spec: 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor
Podobne IXBH42N170
- IXBH15N140
- 1400V high voltage BIMOSFET monolithic bipolar MOS transistor
- IXBH15N160
- 1600V high voltage BIMOSFET monolithic bipolar MOS transistor
- IXBH16N170
- 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor
- IXBH16N170A
- 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor
- IXBH20N140
- 1400V high voltage BIMOSFET monolithic bipolar MOS transistor
- IXBH20N160
- 1600V high voltage BIMOSFET monolithic bipolar MOS transistor
- IXBH42N170
- 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor
- IXBH9N140G
- 1400V high volatge BIMOSFET
IXBH42N170 Datasheet i Spec
Producent : IXYS
Opakowanie : TO-247AD
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Rozmiar : 54 KB
Zastosowanie : 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor
IXBH42N170 PDF Pobierz