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IXBT42N170 spec: 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor
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- 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor
IXBT42N170 Datasheet i Spec
Producent : IXYS
Opakowanie : TO-268
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Rozmiar : 54 KB
Zastosowanie : 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor
IXBT42N170 PDF Pobierz