Path:OKDatasheet > Dane Semiconductor > JGD Datasheet > IN5402
IN5402 spec: 3.0 A, silicon rectifier. Max recurrent peak reverse voltage 200 V, max RMS voltage 140 V, max D. C blocking voltage 200 V.
Path:OKDatasheet > Dane Semiconductor > JGD Datasheet > IN5402
IN5402 spec: 3.0 A, silicon rectifier. Max recurrent peak reverse voltage 200 V, max RMS voltage 140 V, max D. C blocking voltage 200 V.
Producent : JGD
Opakowanie :
Pins : 2
Temperatura : Min -65 °C | Max 125 °C
Rozmiar : 152 KB
Zastosowanie : 3.0 A, silicon rectifier. Max recurrent peak reverse voltage 200 V, max RMS voltage 140 V, max D. C blocking voltage 200 V.