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BUL52A spec: Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
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BUL52A Datasheet i Spec
Producent : Magnatec
Opakowanie : TO220
Pins : 3
Temperatura : Min 0 °C | Max 150 °C
Rozmiar : 20 KB
Zastosowanie : Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
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