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BC307 spec: 300mW PNP silicon planar epitaxial transistor
Podobne BC307
- BC300
- 850mW NPN silicon AF medium power amplifier
- BC301
- 850mW NPN silicon AF medium power amplifier
- BC302
- 850mW NPN silicon AF medium power amplifier
- BC303
- 850mW NPN silicon AF medium power amplifier
- BC304
- 850mW NPN silicon AF medium power amplifier
- BC307
- 300mW PNP silicon planar epitaxial transistor
- BC308
- 300mW PNP silicon planar epitaxial transistor
- BC309
- 300mW PNP silicon planar epitaxial transistor
BC307 Datasheet i Spec
Producent : Micro Electronics
Opakowanie : TO-92F
Pins : 2
Temperatura : Min -55 °C | Max 150 °C
Rozmiar : 247 KB
Zastosowanie : 300mW PNP silicon planar epitaxial transistor
BC307 PDF Pobierz