Path:OKDatasheet > Dane Semiconductor > Micro Electronics Datasheet > BD242A
BD242A spec: 4mW NPN silicon epitaxial base power transistor
Podobne BD242A
- BD241
- 4mW NPN silicon epitaxial base power transistor
- BD241A
- 4mW NPN silicon epitaxial base power transistor
- BD241B
- 4mW NPN silicon epitaxial base power transistor
- BD242
- 4mW NPN silicon epitaxial base power transistor
- BD242A
- 4mW NPN silicon epitaxial base power transistor
- BD242B
- 4mW NPN silicon epitaxial base power transistor
BD242A Datasheet i Spec
Producent : Micro Electronics
Opakowanie : TO-220B
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Rozmiar : 107 KB
Zastosowanie : 4mW NPN silicon epitaxial base power transistor
BD242A PDF Pobierz