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BUL45D2 spec: High speed, high gain bipolar NPN power transistor with integrated collector-emitter diode and built-in efficient antisaturation network
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- High speed, high gain bipolar NPN power transistor with integrated collector-emitter diode and built-in efficient antisaturation network
BUL45D2 Datasheet i Spec
Producent : Motorola
Opakowanie :
Pins : 4
Temperatura : Min -65 °C | Max 150 °C
Rozmiar : 488 KB
Zastosowanie : High speed, high gain bipolar NPN power transistor with integrated collector-emitter diode and built-in efficient antisaturation network
BUL45D2 PDF Pobierz