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MGW12N120D spec: Insulated gate bipolar transistor with anti-parallel diode
Podobne MGW12N120D
- MGW12N120
- Insulated gate bipolar transistor
- MGW12N120D
- Insulated gate bipolar transistor with anti-parallel diode
MGW12N120D Datasheet i Spec
Producent : Motorola
Opakowanie : TO-247AE
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Rozmiar : 274 KB
Zastosowanie : Insulated gate bipolar transistor with anti-parallel diode
MGW12N120D PDF Pobierz