Path:OKDatasheet > Dane Semiconductor > Motorola Datasheet > MTB4N80E1
MTB4N80E1 spec: TMOS E-FET high energy power FET D2PAK for surface mount
Podobne MTB4N80E1
- MTB4N80E1
- TMOS E-FET high energy power FET D2PAK for surface mount
MTB4N80E1 Datasheet i Spec
Producent : Motorola
Opakowanie : DPAK
Pins : 4
Temperatura : Min -55 °C | Max 150 °C
Rozmiar : 175 KB
Zastosowanie : TMOS E-FET high energy power FET D2PAK for surface mount
MTB4N80E1 PDF Pobierz