Podobne MTD3055EL

  • MTD3055EL
    • N-channel enhancement-mode silicon gate, 10A, 80V
  • MTD3055EL1
    • N-channel enhancement-mode silicon gate, 10A, 80V
  • MTD3055V
    • TMOS V power field effect transistor D2PAK for surface mount
  • MTD3055V
    • TMOS V power field effect transistor D2PAK for surface mount
  • MTD3055VL
    • TMOS V power field effect transistor D2PAK for surface mount
  • MTD3302
    • HDTMOS single N-channel field effect transistor

MTD3055EL Datasheet i Spec

Producent : Motorola 

Opakowanie : 369A-10 

Pins : 3 

Temperatura : Min -65 °C | Max 150 °C

Rozmiar : 417 KB

Zastosowanie : N-channel enhancement-mode silicon gate, 10A, 80V 

MTD3055EL PDF Pobierz