MTW6N100E spec: TMOS E-FET power field effect transistor TO-247 with isolated mounting hole

Podobne MTW6N100E

MTW6N100E
- TMOS E-FET power field effect transistor TO-247 with isolated mounting hole

MTW6N100E Datasheet i Spec

Producent : Motorola

Opakowanie : TO-247AE

Pins : 4

Temperatura : Min -55 °C | Max 150 °C

Rozmiar : 214 KB

Zastosowanie : TMOS E-FET power field effect transistor TO-247 with isolated mounting hole