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NE4210S01-T1B spec: GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification
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NE4210S01-T1B Datasheet i Spec
Producent : NEC
Opakowanie : 4-pin u-x type mold
Pins : 0
Temperatura : Min 0 °C | Max 0 °C
Rozmiar : 71 KB
Zastosowanie : GaAs HJ-FET for X to Ku band ultra-low noise, high gain amplification
NE4210S01-T1B PDF Pobierz