Path:OKDatasheet > Dane Semiconductor > NTE Electronic Datasheet > NTE312
NTE312 spec: N-channel silicon junction. Field effect transistor.
Podobne NTE312
- NTE30
- Silicon complementary PNP transistor. High power, high current switch.
- NTE300
- Silicon complementary NPN transistor. Audio power amplifier.
- NTE3000
- Light emitting diode miniature, clear red.
- NTE30001
- Infrared emitting diode bi-directional.
- NTE3001
- Light emitting diode miniature, diffused red.
- NTE3007
- Discrete LED indicator. Diffused red, gallium arsenide phosphide red.
- NTE3008
- Discrete LED indicator. Diffused bright red, gallium phosphide on gallium phosphide red.
- NTE3009
- Discrete LED indicator. Diffused orange, gallium arsenide phosphide on gallium phosphide orange.
NTE312 Datasheet i Spec
Producent : NTE Electronic
Opakowanie :
Pins : 3
Temperatura : Min 0 °C | Max 0 °C
Rozmiar : 26 KB
Zastosowanie : N-channel silicon junction. Field effect transistor.
NTE312 PDF Pobierz