Path:OKDatasheet > Dane Semiconductor > NTE Electronic Datasheet > NTE3311
NTE3311 spec: Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.
Path:OKDatasheet > Dane Semiconductor > NTE Electronic Datasheet > NTE3311
NTE3311 spec: Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.
Producent : NTE Electronic
Opakowanie :
Pins : 3
Temperatura : Min 0 °C | Max 150 °C
Rozmiar : 19 KB
Zastosowanie : Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.